| 摘要 |
The present invention relates to a blank mask for extreme ultraviolet, which is capable of creating a high-quality and high-resolution pattern with reduced loading effects and thinned resist film, since an anti-reflective layer among absorption membranes is used as an etching mask in an absorption layer. In addition, the present invention further relates to a photomask using the same. Optical properties of the absorption membrane can be secured by regulating the composition ratio of light elements and substances making up the absorption layer and the anti-reflective layer. In addition, it is possible to produce, by using the thinned blank mask for extreme ultraviolet, the high-quality photomask for extreme ultraviolet, which has superior pattern accuracy when forming the pattern which is less than or equal to 14 nm, particularly less than or equal to 7 nm. |
