| 摘要 |
A method for fabricating a standard wafer according to an embodiment includes the steps of: manufacturing a polluted solution with a preset concentration including metal impurities; removing an oxide layer from a wafer edge part; attaching multiple bubbles of the polluted solution to a local region of the wafer edge part; and drying the bubbles. The polluted solution is attached onto a boundary part between the upper surface of the wafer and an upper inclined part which is a starting position of the slope of the wafer edge part. Therefore, a standard wafer which has polluted metal impurities by concentration can be provided to the wafer edge part. The metal pollution of the wafer edge part is selectively extracted, so the metal pollution of the wafer edge part can be quantitatively and qualitatively analyzed and measured. |
