| 摘要 |
A method for operating a nonvolatile memory device comprises first buffer memory cells and main memory cells. The first buffer memory cells store first data. The main memory cells store second data, which is read from the first buffer memory cells, or first data, which is recovered from the second data through a correction process. The method for operating a nonvolatile memory device comprises the following steps of: reading data, which is stored in sample buffer memory cells included in the first buffer memory cells, as sample data when an accumulated number of read commands, which are executed in the non-volatile memory device, reaches a reference value; counting the number of errors included in the sample data based an error correction code; and determining whether the main memory cells store the second data or the first data, which is recovered from the second data through the correction process, based on the number of the errors when the number of errors is a first threshold value or lower. |
