发明名称 |
METHOD OF GENERATING MODIFIED LAYOUT FOR RC EXTRACTION |
摘要 |
The method of the present invention includes determining the width bias value of the first set of a layout pattern of the i-th set of an original layout according to the width variation of a first type. Here, the original layout has the layout pattern of N sets corresponding to N masks. Here, the layout pattern of the i-th set is allocated to an i-th mask assignment corresponding to the i-th mask among the N masks. An order index i is an integer of one to N, and N is greater than one. The width bias values of the second set of the layout pattern of the i-th set of the original layout is determined according to the width variation of a second type. A modified layout is generated based on the width bias values of the first set and the second set of the layout pattern of the i-th set. |
申请公布号 |
KR20160016509(A) |
申请公布日期 |
2016.02.15 |
申请号 |
KR20140193457 |
申请日期 |
2014.12.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HO CHIA MING;SU KE YING;LEE HSIEN HSIN SEAN |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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