发明名称 METHOD OF GENERATING MODIFIED LAYOUT FOR RC EXTRACTION
摘要 The method of the present invention includes determining the width bias value of the first set of a layout pattern of the i-th set of an original layout according to the width variation of a first type. Here, the original layout has the layout pattern of N sets corresponding to N masks. Here, the layout pattern of the i-th set is allocated to an i-th mask assignment corresponding to the i-th mask among the N masks. An order index i is an integer of one to N, and N is greater than one. The width bias values of the second set of the layout pattern of the i-th set of the original layout is determined according to the width variation of a second type. A modified layout is generated based on the width bias values of the first set and the second set of the layout pattern of the i-th set.
申请公布号 KR20160016509(A) 申请公布日期 2016.02.15
申请号 KR20140193457 申请日期 2014.12.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HO CHIA MING;SU KE YING;LEE HSIEN HSIN SEAN
分类号 G06F17/50 主分类号 G06F17/50
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