RESIST STRIPPER COMPOSITION AND A METHOD OF STRIPPING RESIST USING THE SAME

摘要

Provided are a resist stripping composition comprising an amide compound represented by chemical formula 1, an organic amine compound, and a glycol ether compound; and a resist stripping method using the same. In the chemical formula 1, X is O or NR; R is hydrogen, aliphatic hydrocarbon having 1-4 carbon atoms, or an aldehyde group. The resist stripping composition can remarkably remove resist patterns which are modified after wet or dry etching by having great polarity of the stripping solution, and has excellent storage stability while having little process loss.