SEMICONDUCTOR DEVICE INCLUDING TRANSPARENT ELECTRODES AND METHOD OF FABRICATING THEREOF

摘要

Provided are a semiconductor device, including a transparent electrode, and a manufacturing method thereof. The semiconductor device includes: multiple electrodes; a channel area forming a channel between at least some electrodes among multiple electrodes; and an interlayer film formed between at least one part of the channel area and at least some of the electrodes. The interlayer film includes metal. A difference between a work function of the metal, included in the interlayer film, and the electron affinity of a channel area material, included in the channel area, is no more than ± 0.5eV.