| 摘要 |
A semiconductor device of an embodiment of the present invention comprises a first semiconductor area, a plurality of second semiconductor areas, a plurality of third semiconductor areas, a plurality of fourth semiconductor areas, a fifth semiconductor area and a gate electrode. The second semiconductor area has impurity density of a first conduction type higher than impurity density of the first conduction type of the first semiconductor area. The third semiconductor area includes a first part and a second part. The first part is formed between second semiconductor areas adjacent to each other. The amount of impurities of a second conduction type in the first part is greater than the amount of impurities of the first conduction type included in the adjacent second semiconductor area. The second part is formed in the first semiconductor area. The amount of impurities of the second conduction type in the second part is smaller than the amount of impurities of the first conduction type included in the adjacent first semiconductor area. |
