| 摘要 |
The present invention is to solve a problem that a silicon carbide component used in a semiconductor plasma processing apparatus is wasted by useful life expiration, and relates to a method for recycling a silicon carbide component used in a plasma processing apparatus, for example, a plasma etching apparatus, to be used again in the plasma processing apparatus, and a silicon carbide component recycled thereby. According to the present invention, a silicon carbide component which is mounted on the plasma processing apparatus and has a deteriorating form or physical property significantly deteriorates or includes a large amount of impurities by wearing and deterioration of the surface due to continuous exposure to plasma, is subjected to a predetermined pretreatment, then a high-purity chemical vapor deposition silicon carbide (CVD-SiC) layer is formed by chemical vapor deposition, and a silicon carbide component securing surface roughness through an appropriate post-process is manufactured. When an expensive silicon carbide component is recycled as described above, it is possible to significantly lower the cost, and it is possible to secure market competitiveness. |
