In-Ga-Sn-BASED OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor film suitable for a patterning step when producing a semiconductor element, and to provide an oxide sintered body capable of depositing a semiconductor film.SOLUTION: An oxide sintered body contains an indium element (In), a gallium element (Ga) and a tin element (Sn) at each atomic ratio described in following formulas (1)-(3): 0.10≤In/(In+Ga+Sn)≤0.60 (1); 0.10≤Ga/(In+Ga+Sn)≤0.55 (2); 0.0001