| 摘要 |
PROBLEM TO BE SOLVED: To provide a socket for an IC device having a structure capable of effectively suppressing instability of a power source associated with lowering in voltage and increasing in speed of the IC device.SOLUTION: A socket for an IC device comprises a dielectric layer arranged so as to configure a capacitor in a space between a first surface and a second surface of base material composed of insulating material, and a power source layer 2104 and a GND layer 2201 formed on both sides of the dielectric layer. Area defined by an outermost periphery of at least the power source layer 2104 of the power source layer 2104 and the GND layer 2201 is set to be smaller than area defined by an outermost periphery of the first surface. Capacitance between the power source layer 2104 and the GND layer 2201 is controlled by changing area of a portion AR where the power source layer 2104 and the GND layer 2201 overlap when the second surface is viewed from the first surface.SELECTED DRAWING: Figure 8 |
