MEMORY CELL AND DRIVING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that has small occupied area, and can achieve high integration and large storage capacity.SOLUTION: By using a transistor 210 including a control gate 211 and a storage gate 212, the storage gate of the transistor is made conductive, and after particular potential is supplied to the storage gate, the storage gate is insulated to hold the potential. Writing of information is performed by: making potential of the control gate have potential that makes the storage gate conductive; supplying potential of the information to be stored in the storage gate; and then making potential of the control gate have potential that makes the storage gate insulated. Readout of the information is performed by: supplying predetermined readout potential to a readout signal line connected to one of a source or a drain of the transistor; and then detecting potential change of a bit line connected to the other of the source or the drain.SELECTED DRAWING: Figure 1