HIGH POWER LIGHT EMITTING DEVICE AND METHOD OF MAKING THE SAME

摘要

Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm2.

主权项

1. A light emitting device, comprising:
a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, the light emitting diode including a light emitting structure including an active layer, a first conductive-type semiconductor layer disposed over the active layer, and a second conductive type semiconductor layer, the active layer disposed over the second conductive-type semiconductor layer, wherein the light emitting diode is configured to emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode, wherein the light emitting diode includes:
at least one groove formed in the light emitting structure and exposing a portion of the first conductive-type semiconductor layer;a first electrode disposed under the light emitting structure and electrically connected to the first conductive-type semiconductor layer exposed by the at least one groove; anda second electrode disposed under a lower surface of the second conductive-type semiconductor layer and at least partially covered by the second conductive-type semiconductor layer, and wherein the light emitting diode has a semi-polar or non-polar growth surface, the wavelength conversion unit includes a multi-layered structure including a first phosphor layer and a second phosphor layer disposed over the first phosphor layer, and the light emitting diode is configured to be driven at a current density equal to or greater than 350 mA/mm2.