| 发明名称 |
INTEGRATED CIRCUITS AND FABRICATION METHODS THEREOF |
| 摘要 |
A method of fabricating an integrated circuit is also provided. The method includes forming a first polysilicon region having an initial grain size on a substrate. The first polysilicon region is implanted with a first dopant of a first conductivity type and a second dopant. After the implantation, the first polysilicon region has a first grain size larger than the initial grain size. Then, a laser rapid thermal annealing process is performed to the first polysilicon region. |
| 申请公布号 |
US2016043162(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514886221 |
申请日期 |
2015.10.19 |
| 申请人 |
MediaTek Inc. |
发明人 |
CHUNG Yuan-Fu;HU Chu-Wei;CHUNG Yuan-Hung |
| 分类号 |
H01L49/02;H01L21/265;H01L29/167;H01L21/324;H01L21/268;H01L21/266;H01L29/06;H01L27/06;H01L21/8234;H01L21/02;H01L21/28 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating an integrated circuit, comprising:
forming a first polysilicon region having an initial grain size on a substrate; implanting the first polysilicon region with a first dopant of a first conductivity type and a second dopant, after the implanting, the first polysilicon region having a first grain size greater than the initial grain size; and performing a laser rapid thermal annealing process to the first polysilicon region. |
| 地址 |
Hsin-Chu TW |
