发明名称 |
METHOD OF PROGRAMMING MEMORY DEVICE |
摘要 |
A method of programming a memory device includes programming a low bit to a memory cell included in a word line and a bit line based on a first verification condition, the low bit belonging to a group of bits including a high bit. The first verification condition is based on at least one of a first bit line current, a first develop time for verifying the programming of the low bit, and a first word line voltage. The method includes programming the high bit to the memory cell based on a second verification condition. The second verification condition is based on at least one of a second bit line current, a second develop time for verifying the programming of the high bit, and a second word line voltage. |
申请公布号 |
US2016042803(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201514733583 |
申请日期 |
2015.06.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON Joon-Soo;PARK Sang-Soo |
分类号 |
G11C16/34;G11C16/10;G11C11/56 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
1. A method of programming a memory device comprising:
programming a low bit to a memory cell included in a word line and a bit line based on a first verification condition, the low bit belonging to a group of bits including a high bit, the first verification condition being based on at least one of a first bit line current, a first develop time for verifying the programming of the low bit, and a first word line voltage; programming the high bit to the memory cell based on a second verification condition, the second verification condition being based on at least one of a second bit line current, a second develop time for verifying the programming of the high bit, and a second word line voltage. |
地址 |
Suwon-si KR |