METHOD OF FABRICATING A LIGHT EMITTING DIODE DEVICE

摘要

The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

主权项

1. A method of fabricating a light emitting diode device, comprising:
sequentially forming a first-type doping layer, a light emitting layer and a second-type doping layer on a substrate; forming an Ohmic-contact layer on the second-type doping layer; forming a material layer and a metal layer on the Ohmic-contact layer, wherein the material layer at least comprises a metal oxide layer; and forming a first electrode and a second electrode the first-type doping layer and the metal layer respectively, wherein the first electrode is electrically connected to the first-type doping layer and the second electrode is electrically connected to the Ohmic-contact layer through the metal layer.