发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions. |
申请公布号 |
US2016043231(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201514920244 |
申请日期 |
2015.10.22 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
KOEZUKA Junichi;OHNO Shinji;SATO Yuichi;TAKAHASHI Masahiro;KISHIDA Hideyuki |
分类号 |
H01L29/786;H01L29/04;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
an oxide semiconductor film on an insulating surface, the oxide semiconductor film including a first region, a second region, and a third region; a gate insulating film over the oxide semiconductor film; a gate electrode over the gate insulating film, the gate electrode overlapping with the first region; a first electrode electrically connected to the second region; and a second electrode electrically connected to the third region, wherein the first region is interposed between the second region and the third region, wherein, in the first region, c-axes of crystals are aligned substantially perpendicularly to the insulating surface throughout a thickness of the oxide semiconductor film; wherein each of the second region and the third region is added with an impurity element and comprises a first portion in contact with the insulating surface and a second portion over the first portion, wherein the second portion has a polycrystalline oxide semiconductor, and wherein, in the second portion, c-axes of crystals are aligned substantially perpendicularly to the insulating surface. |
地址 |
Atsugi-shi JP |