发明名称 |
Semiconductor Device and Manufacturing Method Thereof |
摘要 |
To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed. |
申请公布号 |
US2016042990(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201514922556 |
申请日期 |
2015.10.26 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
KOEZUKA Junichi;JINTYOU Masami;SHIMA Yukinori;IGUCHI Takahiro |
分类号 |
H01L21/768;H01L27/12 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a semiconductor layer; forming a first protective film having conductivity over the semiconductor layer; forming a conductive film containing copper, aluminum, gold, or silver over the first protective film; forming a second protective film over the conductive film; processing the second protective film to form a second protective layer; processing the conductive film to form a conductive layer; forming a third protective film in contact with a side surface and a top surface of the second protective layer and a side surface of the conductive layer; and processing the third protective film and the first protective film by anisotropic etching to form a third protective layer in contact with the side surface of the conductive layer and a first protective layer between the conductive layer and the semiconductor layer, respectively. |
地址 |
Kanagawa-ken JP |