| 发明名称 |
TECHNIQUES AND APPARATUS FOR ANISOTROPIC METAL ETCHING |
| 摘要 |
In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer. |
| 申请公布号 |
US2016042922(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201414452153 |
申请日期 |
2014.08.05 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Omstead Thomas R.;MA Tristan;Godet Ludovic |
| 分类号 |
H01J37/32;H01L21/67;H01L21/768 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for etching a copper layer disposed on a substrate, comprising:
directing an ion beam comprising reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer. |
| 地址 |
Gloucester MA US |
