发明名称 |
METHODS AND APPARATUS FOR LOW INPUT VOLTAGE BANDGAP REFERENCE ARCHITECTURE AND CIRCUITS |
摘要 |
In some embodiments, an apparatus includes a bandgap reference circuit having a first bipolar junction transistor (BJT) that can receive a current from a node having a terminal voltage and can output a base emitter voltage. The apparatus also includes a second bipolar junction transistor (BJT) having a device width greater than a device width of the first BJT. The second BJT can receive a current from a node having a terminal voltage and output a base emitter voltage. In such embodiments, the apparatus also includes a reference generation circuit operatively coupled to the first BJT and the second BJT, where the reference generation circuit can generate a bandgap reference voltage based on the base emitter voltage of the first BJT and the base emitter voltage of the second BJT. |
申请公布号 |
US2016041570(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201514880817 |
申请日期 |
2015.10.12 |
申请人 |
PsiKick, Inc. |
发明人 |
Shrivastava Aatmesh |
分类号 |
G05F1/46 |
主分类号 |
G05F1/46 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus, comprising:
a bandgap reference circuit having:
a first bipolar junction transistor (BJT) configured to generate a base emitter voltage of the first BJT based on an input voltage of the first BJP that is lower than the base emitter voltage;a second bipolar junction transistor (BJT) having a device width greater than a device width of the first BJT, the second BJT configured to generate a base emitter voltage of the second BJT based on an input voltage lower of the second BJT that is than the base emitter voltage of the second BJT; anda reference generation circuit operatively coupled to the first BJT and the second BJT, the reference generation circuit configured to generate a bandgap reference voltage based on the base emitter voltage of the first BJT and the base emitter voltage of the second BJT. |
地址 |
Charlottesville VA US |