发明名称 METHODS AND APPARATUS FOR LOW INPUT VOLTAGE BANDGAP REFERENCE ARCHITECTURE AND CIRCUITS
摘要 In some embodiments, an apparatus includes a bandgap reference circuit having a first bipolar junction transistor (BJT) that can receive a current from a node having a terminal voltage and can output a base emitter voltage. The apparatus also includes a second bipolar junction transistor (BJT) having a device width greater than a device width of the first BJT. The second BJT can receive a current from a node having a terminal voltage and output a base emitter voltage. In such embodiments, the apparatus also includes a reference generation circuit operatively coupled to the first BJT and the second BJT, where the reference generation circuit can generate a bandgap reference voltage based on the base emitter voltage of the first BJT and the base emitter voltage of the second BJT.
申请公布号 US2016041570(A1) 申请公布日期 2016.02.11
申请号 US201514880817 申请日期 2015.10.12
申请人 PsiKick, Inc. 发明人 Shrivastava Aatmesh
分类号 G05F1/46 主分类号 G05F1/46
代理机构 代理人
主权项 1. An apparatus, comprising: a bandgap reference circuit having: a first bipolar junction transistor (BJT) configured to generate a base emitter voltage of the first BJT based on an input voltage of the first BJP that is lower than the base emitter voltage;a second bipolar junction transistor (BJT) having a device width greater than a device width of the first BJT, the second BJT configured to generate a base emitter voltage of the second BJT based on an input voltage lower of the second BJT that is than the base emitter voltage of the second BJT; anda reference generation circuit operatively coupled to the first BJT and the second BJT, the reference generation circuit configured to generate a bandgap reference voltage based on the base emitter voltage of the first BJT and the base emitter voltage of the second BJT.
地址 Charlottesville VA US