CONFIGURATIONS AND TECHNIQUES TO INCREASE INTERFACIAL ANISOTROPY OF MAGNETIC TUNNEL JUNCTIONS

摘要

Embodiments of the present disclosure describe configurations and techniques to increase interfacial anisotropy of magnetic tunnel junctions. In embodiments, a magnetic tunnel junction may include a cap layer, a tunnel barrier, and a magnetic layer disposed between the cap layer and the tunnel barrier. A buffer layer may, in some embodiments, be disposed between the magnetic layer and a selected one of the cap layer or the tunnel barrier. In such embodiments, the interfacial anisotropy of the buffer layer and the selected one of the cap layer or the tunnel barrier may be greater than an interfacial anisotropy of the magnetic layer and the selected one of the cap layer or the tunnel barrier. Other embodiments may be described and/or claimed.