SEMICONDUCTOR DEVICE

摘要

An IGBT is disposed in an IGBT portion, and an FWD is disposed in an FWD portion. A p-type base region and an n−-type drift region are alternately exposed in a trench longitudinal direction in a substrate front surface in a mesa portion between neighboring trenches in the IGBT portion. A p-type anode region and the n−-type drift region are alternately exposed in the trench longitudinal direction in the substrate front surface in a mesa portion in the FWD portion, and a repetitive structure is formed with a portion of the n−-type drift region sandwiched between p-type anode regions and one p-type anode region in contact with the portion as one unit region. The proportion occupied by the p-type anode region in one unit region (an anode ratio) (α) is 50% to 100%.

主权项

1. A semiconductor device comprising a first element region in which an insulated gate bipolar transistor is provided and a second element region in which a diode is provided on a semiconductor substrate that forms a first conductivity type drift region, the semiconductor device further comprising:
a plurality of trenches provided in stripe form extending in a trench longitudinal direction perpendicular to a direction in which the first element region and second element region are aligned from the first element region across the second element region in a front surface of the semiconductor substrate; a gate insulating film provided along side walls and bottom surfaces of the trenches; a gate electrode provided on an inner side of the gate insulating film inside the trenches; a second conductivity type base region selectively provided in a mesa portion between neighboring trenches of the first element region; a second conductivity type anode region selectively provided in a mesa portion between neighboring trenches of the second element region; a first conductivity type emitter region selectively provided inside the base region; a first electrode in contact with the base region, emitter region, and anode region; a second conductivity type collector region provided on a back surface of the semiconductor substrate in the first element region; a first conductivity type cathode region provided on the back surface of the semiconductor substrate in the second element region; and a second electrode in contact with the collector region and cathode region, wherein the anode region and drift region are repeatedly, alternately disposed in the trench longitudinal direction in a mesa portion between neighboring trenches of the second element region, and a proportion occupied by the anode region of a unit region formed of the anode region and the drift region in a portion sandwiched by the anode region and the anode region neighboring the anode region in the trench longitudinal direction is 50% or more and less than 100%.