发明名称 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
摘要 The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
申请公布号 US2016041465(A1) 申请公布日期 2016.02.11
申请号 US201514881400 申请日期 2015.10.13
申请人 FUJIFILM Corporation 发明人 TAKIZAWA Hiroo;HIRANO Shuji;YOKOKAWA Natsumi;NIHASHI Wataru
分类号 G03F7/038;G03F7/32;G03F7/20 主分类号 G03F7/038
代理机构 代理人
主权项 1. A pattern forming method, comprising: (1) forming a film using an active light sensitive or radiation sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, wherein the resin (A) has at least one of a phenolic hydroxyl group and a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and wherein the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
地址 Tokyo JP
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