| 发明名称 |
ETCHING METHOD AND METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD SUBSTRATE |
| 摘要 |
An etching method of etching a first member containing iridium is provided. The method includes forming a second member above the first member, forming a first mask pattern on the second member, forming a second mask pattern by etching the second member using the first mask pattern and etching the first member using the first mask pattern and the second mask pattern. In etching the first member, the first member is etched on a condition that the first mask pattern shrinks and an upper surface of the second mask pattern is partially exposed. |
| 申请公布号 |
US2016039206(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514794947 |
申请日期 |
2015.07.09 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Usui Takashi;Sakai Toshiyasu;Ishida Yuzuru;Hosaka Hisanori |
| 分类号 |
B41J2/16 |
主分类号 |
B41J2/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching method of etching a first member containing iridium, the method comprising:
forming a second member above the first member; forming a first mask pattern on the second member; forming a second mask pattern by etching the second member using the first mask pattern; and etching the first member using the first mask pattern and the second mask pattern, wherein in etching the first member, the first member is etched on a condition that the first mask pattern shrinks and an upper surface of the second mask pattern is partially exposed. |
| 地址 |
Tokyo JP |
