| 摘要 |
Provided is a Ga2O3-based single crystal substrate capable of achieving a high processing yield. A Ga2O3-basedsingle crystal substrate having a crack density of less than 0.05/cm can be obtained that has as a main surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis. |
