PHOTOMASK INCLUDING FOCUS METROLOGY MARK, SUBSTRATE TARGET INCLUDING FOCUS MONITOR PATTERN, METROLOGY METHOD FOR LITHOGRAPHY PROCESS, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

摘要

The present invention relates to a photomask comprising a focus measurement mark, a substrate target for measurement, comprising a focus monitor pattern, a measurement method of an exposure process, and a manufacturing method of an integrated circuit device. The photomask comprises a focus measurement mark region including a plurality of focus monitor patterns. To measure a focal variation of a feature pattern formed on a substrate, the substrate target for exposure process measurement including the focus measurement mark formed on the same level as the feature pattern is used. A measurement apparatus of an exposure process comprises: a projection device including a polarizer; a detection device which detects the powers of +-n order diffracted light among output beams diffracted by the focus measurement mark of a substrate for measurement; and a determination device which determines defocus experienced when forming the feature pattern from a power deviation of the +-n order diffracted light.