METHOD FOR MANUFACTURING CMOS STRUCTURE

摘要

The present disclosure relates to a method for manufacturing a CMOS structure. A first gate stack is formed on a semiconductor substrate in a first region. A second gate stack is formed on the semiconductor substrate in a second region. A dopant of a first type is implanted with the first gate stack and the second gate stack as a hard mask to form a lightly-doped drain region of the first type. A dopant of a second type is implanted by using a first mask and with the second gate stack as a hard mask to form a lightly-doped drain region of the second type. The first mask blocks the first region and exposes the second region. When the lightly-doped drain region of the second type is formed, the dopant of the second type over dopes a predetermined region of the lightly-doped drain region of the first type. In such a process, over doping is used for reducing the number of masks. A doping concentration of a well region may be modified to adjust work function.

主权项

1. A method for manufacturing a CMOS structure, comprising:
forming a first gate stack on a semiconductor substrate in a first region; forming a second gate stack on said semiconductor substrate in a second region; implanting a dopant of a first type with said first gate stack and said second gate stack as a hard mask, to form a lightly-doped drain region of said first type; and implanting a dopant of a second type by using a first mask and with said second gate stack as a hard mask, to form a lightly-doped drain region of said second type, wherein said first mask blocks said first region and exposes said second region, wherein when said lightly-doped drain region of said second type is formed, said dopant of said second type over dopes a predetermined region of said lightly-doped drain region of said first type.