COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THROUGH A WETTED SURFACE WITHOUT A PRIOR DRYING STEP

摘要

A method includes depositing a film solution onto a patterned feature of a semiconductor substrate after wet cleaning the semiconductor substrate and without performing a drying step after the wet cleaning. The film solution includes a dielectric film precursor or a dielectric film precursor and at least one of a reactant, a solvent, a surfactant and a carrier fluid. The method includes baking at least one of solvent and unreacted solution out of a film formed by the film solution by heating the substrate to a baking temperature. The method includes curing the substrate.

主权项

1. A method comprising:
after wet cleaning a semiconductor substrate including a patterned feature:
without performing a drying step after wet cleaning the semiconductor substrate, depositing a film solution onto the patterned feature of the semiconductor substrate,wherein the film solution includes:
a dielectric film precursor; orthe dielectric film precursor and at least one of a reactant, a solvent, a surfactant and a carrier fluid; andbaking at least one of solvent and unreacted solution out of a film formed by the film solution by heating the substrate to a baking temperature.