| 发明名称 |
MEMORY DEVICE INCLUDING REFERENCE VOLTAGE GENERATOR |
| 摘要 |
A memory device includes a first memory cell array including memory cells of a single-ended bitline structure, a second memory cell array including memory cells of a single-ended bitline structure, a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and output a bitline voltage of an unselected memory cell array as a reference voltage, and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage. Logic states of the sensing voltage and the reference voltage are complementary to each other. |
| 申请公布号 |
US2016042785(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514793053 |
申请日期 |
2015.07.07 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Rim Woojin;Song Taejoong;Kim Gyuhong;Park Jongsun;Choi Woong |
| 分类号 |
G11C11/419;G11C11/418 |
主分类号 |
G11C11/419 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a first memory cell array comprising memory cells of a single-ended bitline structure; a second memory cell array comprising memory cells of a single-ended bitline structure; a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and to output a bitline voltage of an unselected memory cell array as a reference voltage; and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage, wherein logic states of the sensing voltage and the reference voltage are complementary to each other. |
| 地址 |
Suwon-si KR |
