| 摘要 |
An semiconductor on insulator wafer has an insulator layer between a substrate layer and a semiconductor layer. A first active layer is formed in and on the semiconductor layer. A second active layer is formed in and on the substrate layer. In some embodiments, a handle wafer is bonded to the semiconductor on insulator wafer, and the substrate layer is thinned before forming the second active layer. In some embodiments, a third active layer may be formed in the substrate of the handle wafer. In some embodiments, the first and second active layers include a MEMS device in one of these layers and a CMOS device in the other. |
