发明名称 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
摘要 A novel light-emitting device is provided. A novel light-emitting device with high emission efficiency, low power consumption, and small viewing angle dependence of chromaticity is provided. The light-emitting device includes at least one light-emitting element and one optical element. A spectrum of light emitted from the light-emitting element through the optical element in a range of greater than 0° and less than or equal to 70° with respect to a normal vector of the light-emitting element has a first local maximum value in a wavelength range of greater than or equal to 400 nm and less than 480 nm and a second local maximum value located on a longer wavelength side than the first local maximum value. The intensity ratio of the second local maximum value to the first local maximum value is less than or equal to 15%.
申请公布号 US2016043338(A1) 申请公布日期 2016.02.11
申请号 US201514817677 申请日期 2015.08.04
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 SEO Satoshi;SASAKI Toshiki;OHSAWA Nobuharu
分类号 H01L51/50;H01L51/52;H01L27/32 主分类号 H01L51/50
代理机构 代理人
主权项 1. A light-emitting device comprising first to third light-emitting elements and first to third optical elements, wherein a spectrum of light emitted from the first light-emitting element through the first optical element has a first local maximum value in a wavelength range of greater than or equal to 600 nm and less than or equal to 740 nm, wherein a spectrum of light emitted from the second light-emitting element through the second optical element has a second local maximum value in a wavelength range of greater than or equal to 480 nm and less than 550 nm, wherein a spectrum of light emitted from the third light-emitting element through the third optical element in a range of greater than 0° and less than or equal to 70° with respect to a normal vector of the third light-emitting element has a third local maximum value in a wavelength range of greater than or equal to 400 nm and less than 480 nm and a fourth local maximum value located on a longer wavelength side than the third local maximum value, and wherein an intensity ratio of the fourth local maximum value to the third local maximum value is less than or equal to 15%.
地址 Atsugi-shi JP