| 摘要 |
A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer. |
| 主权项 |
1. A semiconductor light emitting device, comprising:
a first conductivity-type semiconductor layer including an n-type GaN contact layer, an n-type GaN layer disposed on the n-type GaN contact layer, doped with silicon (Si) acting as an n-type dopant in a concentration of 2×1018 cm−3 to 9×1019 cm−3, and having a thickness of 1 nm to 500 nm, and an n-type super-lattice layer disposed on the n-type GaN layer and having a structure in which two or more AlxInyGazN (0≦x,y,z≦1, x+y+z>0) having different compositions are repeatedly stacked; a border layer disposed on the first conductivity-type semiconductor layer and having band gap energy decreasing in a direction away from the first conductivity-type semiconductor layer; an active layer contacting the border layer and having a multiple quantum well structure in which five or more quantum well layers and four or more quantum barrier layers are alternately stacked; and a second conductivity-type semiconductor layer including a p-type AlxInyGazN layer (0≦x,y,z≦1, x+y+z>0) disposed on the active layer and having a composition ratio of aluminum (Al) increased or decreased in a direction away from the active layer, and a p-type GaN layer disposed on the p-type AlxInyGazN layer (0≦x,y,z≦1, x+y+z>0), doped with magnesium (Mg) acting as a p-type dopant in a concentration of 1×1018 cm−3 to 9×1021 cm−3, and having a thickness of 30 nm to 150 nm, the concentration of magnesium being increased or decreased in a thickness direction, wherein at least one of the first conductivity-type semiconductor layer, the border layer, the active layer and the second conductivity-type semiconductor layer has a V-shaped distortion containing layer formed thereon. |
