| 发明名称 |
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS |
| 摘要 |
A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between the III-nitride substrate and the regrowth interface. |
| 申请公布号 |
US2016043182(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514824880 |
申请日期 |
2015.08.12 |
| 申请人 |
Avogy, Inc. |
发明人 |
Bour David P.;Prunty Thomas R.;Romano Linda;Edwards Andrew P.;Kizilyalli Isik C.;Nie Hui;Brown Richard J.;Raj Mahdan |
| 分类号 |
H01L29/20;H01L21/225;H01L29/36;H01L29/207;H01L29/30 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a III-nitride substrate having a first conductivity type; a first electrode electrically coupled to the III-nitride substrate; a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface; and a p-n junction disposed between the III-nitride substrate and the regrowth interface. |
| 地址 |
San Jose CA US |
