| 发明名称 |
RADIATION DETECTOR |
| 摘要 |
A radiation detector may include: a common electrode; a thin film transistor (TFT) array; a photoconductor material layer disposed between the common electrode and the TFT array; and a diffusion stop layer, disposed between the common electrode and the TFT array, on a location corresponding to a connecting portion where the common electrode is connected to a bias voltage supply source, wherein the diffusion stop layer prevents a metal included in the connecting portion from diffusing to the photoconductor material layer. |
| 申请公布号 |
US2016043127(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514798972 |
申请日期 |
2015.07.14 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Sunil;LEE Dongwook;LEE Changbum;PARK Jaechul |
| 分类号 |
H01L27/146;H01L27/148 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A radiation detector comprising:
a common electrode including a connecting portion configured to connect the common electrode and a bias voltage source; a thin film transistor (TFT) array; a photoconductor material layer between the common electrode and the TFT array; and a diffusion stop layer between the common electrode and the TFT array, in a location corresponding to the connecting portion, the diffusion stop layer configured to prevent a metal included in the connecting portion from diffusing to the photoconductor material layer. |
| 地址 |
Suwon-si KR |
