TEMPERATURE CONTROL FOR GaN BASED MATERIALS

摘要

A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

主权项

1. An in-situ temperature measurement system for a wafer treatment reactor, the system comprising:
(a) a wafer support element having a rotational axis; (b) a heating element for the wafer support element; (c) a first operating pyrometer adapted to receive radiation from a first portion of the wafer support element at a first radial distance from the rotational axis; and (d) a wafer temperature measurement device located at a first position, the wafer temperature measurement device in the first position being adapted to receive radiation from at least one wafer disposed on the wafer support element at the first radial distance from the rotational axis.