SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

[Problem] Provided is a semiconductor device in which an electrode of a semiconductor element and an electrode of a metal substrate are directly bonded, wherein the semiconductor device has good yield, connection reliability, and mass producibility, and excellent heat dissipation. Also provided is a method for manufacturing the semiconductor device. [Solution] A method for manufacturing a semiconductor device in which electrode sections 2a, 2b of a metal substrate 2 are directly bonded to an electrode of a semiconductor element 1, wherein the method has: a groove formation step in which an electrode separation groove 3a is formed at a prescribed depth at an element mounting position 7 on one main surface of the metal substrate 2; an element mounting step in which the semiconductor element 1 is mounted on both sides of the electrode separation groove 3a; and a grinding step in which the metal substrate is ground from the rear-surface side of the one main surface of the metal substrate 2 to a position reaching the electrode separation groove.