| 摘要 |
A system and a method for manufacturing a three-dimensional image sensor structure are disclosed. The method comprises the following steps: providing an image sensor with a backside illuminated photosensitive region on a substrate; applying a first dielectric layer to a first side of the substrate opposite to a lateral side of the substrate where image data is gathered; and applying a semiconductor layer which is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer within the semiconductor layer, and may selectively be a row select, reset or source follower transistor. An interlayer insulator may be applied onto the first dielectric layer, and may have at least one metal interconnect disposed therein. A second interlayer dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate, or through deposition. |
