发明名称 SEMICONDUCTOR DEVICE
摘要 The present invention is provided to easily manufacture an IPD as any of a high-side switch and a low-side switch. A level shifting circuit is coupled to an input terminal, a first terminal, and a grounding terminal. Drive power of the level shifting circuit is supplied from the first terminal. An output signal of the level shifting circuit is input to a driver circuit. The driver circuit is coupled to the first terminal and a second terminal. Drive power of the driver circuit is supplied from the first terminal. A transistor has a gate electrode coupled to the driver circuit, a source coupled to the second terminal, and a drain coupled to a third terminal.
申请公布号 US2016043714(A1) 申请公布日期 2016.02.11
申请号 US201514806022 申请日期 2015.07.22
申请人 Renesas Electronics Corporation 发明人 YANAGIGAWA Hiroshi
分类号 H03K17/687 主分类号 H03K17/687
代理机构 代理人
主权项 1. A semiconductor device comprising: a power supply terminal; a grounding terminal; an input terminal; a first terminal; a second terminal; a third terminal; a level shifting circuit which is coupled to the input terminal, the first terminal, and the grounding terminal and to which drive power is supplied from the first terminal; a driver circuit which is coupled to the first and second terminals and to which an output signal of the level shifting circuit is input and drive power is supplied from the first terminal; a first transistor whose gate electrode is coupled to the driver circuit, whose source is coupled to the second terminal, and whose drain is coupled to the third terminal; and a first element coupling the power supply terminal to the first terminal and serving as a diode or a second transistor.
地址 Kanagawa JP