| 发明名称 |
MTJ SPIN HALL MRAM BIT-CELL AND ARRAY |
| 摘要 |
Described is an apparatus 1T-1 Magnetic Tunnel Junction (MTJ) Spin Hall Magnetic Random Access Memory (MRAM) bit-cell and array, and method of forming such. The apparatus comprises: a select line; an interconnect with Spin Hall Effect (SHE) material, the interconnect coupled to a write bit line; a transistor coupled to the select line and the interconnect, the transistor controllable by a word line; and a MTJ device having a free magnetic layer coupled to the interconnect. |
| 申请公布号 |
US2016042778(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201314780489 |
申请日期 |
2013.06.21 |
| 申请人 |
INTEL CORPORATION |
发明人 |
MANIPATRUNI SASIKANTH;NIKONOV DMITRI;YOUNG IAN |
| 分类号 |
G11C11/16;H01L43/06;H01L27/22;H01L43/12 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a select line; an interconnect with Spin Hall Effect (SHE) material, the interconnect coupled to a write bit line; a transistor coupled to the select line and the interconnect, the transistor controllable by a word line; and a Magnetic Tunnel Junction (MTJ) device having a free magnetic layer coupled to the interconnect. |
| 地址 |
Santa Clara CA US |
