发明名称 |
APPARATUS FOR IN SITU DEPOSITION OF MULTILAYER STRUCTURES VIA ATOMIC LAYER DEPOSITION AND ULTRA-HIGH VACUUM PHYSICAL OR CHEMICAL VAPOR DEPOSITION |
摘要 |
An apparatus for in situ fabrication of multilayer heterostructures is provided comprising a first vacuum chamber adapted for atomic layer deposition and comprising a first stage docking assembly configured to dock a detachable stage configured to support a substrate; a second vacuum chamber adapted for ultra-high vacuum physical or chemical vapor deposition and comprising a second stage docking assembly configured to dock the detachable stage; a load lock vacuum chamber between the first and second vacuum chambers and comprising a third stage docking assembly configured to dock the detachable stage, the load lock vacuum chamber coupled to the first vacuum chamber via a first shared valve and coupled to the second vacuum chamber via a second shared valve; and a substrate transport vacuum chamber comprising a substrate transfer device, the substrate transfer device configured to detachably couple to the detachable stage and to transfer the substrate supported by the detachable stage in situ between the first vacuum chamber, the second vacuum chamber and the load lock vacuum chamber. |
申请公布号 |
US2016040288(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201414456397 |
申请日期 |
2014.08.11 |
申请人 |
Wu Judy Z.;Lu Rongtao;Elliot Alan;Hase Allen |
发明人 |
Wu Judy Z.;Lu Rongtao;Elliot Alan;Hase Allen |
分类号 |
C23C16/455;C23C14/56;C23C16/46 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus for in situ fabrication of multilayer heterostructures comprising:
(a) a first vacuum chamber adapted for atomic layer deposition and comprising a first stage docking assembly configured to dock a detachable stage configured to support a substrate; (b) a second vacuum chamber adapted for ultra-high vacuum physical vapor deposition or ultra-high vacuum chemical vapor deposition and comprising a second stage docking assembly configured to dock the detachable stage; (c) a load lock vacuum chamber between the first and second vacuum chambers and comprising a third stage docking assembly configured to dock the detachable stage, the load lock vacuum chamber coupled to the first vacuum chamber via a first shared valve and coupled to the second vacuum chamber via a second shared valve; and (d) a substrate transport vacuum chamber comprising a substrate transfer device, the substrate transfer device configured to detachably couple to the detachable stage and to transfer the substrate supported by the detachable stage in situ between the first vacuum chamber, the second vacuum chamber and the load lock vacuum chamber. |
地址 |
Lawrence KS US |