| 发明名称 |
PARTICLE IMPROVEMENT FOR SINGLE WAFER APPARATUS |
| 摘要 |
An apparatus includes a susceptor, a first piping, a second piping, a liquid source, a third piping and a gas source. The susceptor is suitable for placing a wafer, and the first piping is configured to dispense a chemical to the wafer on the susceptor. The second piping communicates with the first piping. The liquid source is configured to deliver a cleaning liquid to the first piping through the second piping to wash a portion of the first piping. The third piping communicates with the first piping. The gas source is configured to flow a purge gas to the first piping through the third piping to purge the portion of the first piping. |
| 申请公布号 |
US2016040286(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201414455761 |
申请日期 |
2014.08.08 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUNG Ming-Sung;LEE Yu-Kuei;KAO Cheng-Nan;LIANG Hung-Hsin |
| 分类号 |
C23C16/44;C23C16/458;C23C16/46;C23C16/455 |
主分类号 |
C23C16/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a susceptor for placing a wafer; a first piping configured to dispense a chemical to the wafer on the susceptor; a second piping communicating with the first piping; a liquid source configured to deliver a cleaning liquid to the first piping through the second piping to wash a portion of the first piping; a third piping communicating with the first piping; and a gas source configured to flow a purge gas to the first piping through the third piping to purge the portion of the first piping. |
| 地址 |
Hsinchu TW |
