MICROMACHINED ULTRA-MINIATURE PIEZORESISTIVE PRESSURE SENSOR AND METHOD OF FABRICATION OF THE SAME

摘要

A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The diaphragm of the piezoresistive pressure sensors is formed by fusion bonding. The piezoresistive pressure sensors can be formed by silicon deposition, photolithography and etching processes.

主权项

1. A device, comprising:
a first silicon-on-insulator structure comprising a first silicon layer deposited on a first oxide layer over a first bulk silicon layer; a second silicon-on-insulator structure comprising a second silicon layer deposited on a second oxide layer over a second bulk silicon layer, wherein the first silicon layer and the second silicon layer are bonded together with the first silicon layer and the second silicon layer facing each other after the second bulk silicon layer and the second oxide layer are removed to leave the second silicon layer of the second silicon-on-insulator structure overlying the first silicon layer; one or more openings of predetermined shape and dimension formed to expose a portion of the second silicon layer; one or more piezoresistors formed on the one or more openings of the second silicon layer; a patterned trench formed within the second silicon layer and the first silicon layer, stopping at the first oxide layer; a piezoresistor pressure sensor formed within the patterned trench after the first bulk silicon layer is removed.