发明名称 ION-BEAM DEVICE AND ION-BEAM IRRADIATION METHOD
摘要 The purpose of the present invention is to provide a gas field ionization ion source (1) in which ion-beam current is stable in a long time. In the gas field ionization ion source (1), hydrogen gas ion-beam current has been unstable due to impurity gas. An ion-beam device is equipped with the field ionization ion source (1) for supplying a gas into a chamber (17), forming said gas into an ion-beam, and irradiating a sample and has: an emitter electrode (11) having a needle-shaped tip; the chamber (17) inside which said emitter electrode (11) is placed; a gas supply unit (37) for supplying said gas to said chamber (17); a cooling unit (4) connected to said chamber (17) and cooling said emitter electrode (11); an exhaust-type discharging unit (16) for discharging the gas inside said chamber (17); and a stock-type discharging unit (18) for discharging the gas inside said chamber. In the ion-beam device, the exhaust conductance of said exhaust-type discharging unit (16) is larger than the total exhaust conductance of said stock-type discharging unit (18), which solves the above problem.
申请公布号 WO2016021484(A1) 申请公布日期 2016.02.11
申请号 WO2015JP71734 申请日期 2015.07.31
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 MATSUBARA SHINICHI;SHICHI HIROYASU;KAWANAMI YOSHIMI;HASHIZUME TOMIHIRO
分类号 H01J27/26;H01J37/08;H01J37/18;H01J37/28 主分类号 H01J27/26
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