| 摘要 |
The invention relates to a method (500) for treating a semiconductor material (100), wherein the method (500) comprises a step (504) of discharging, a step (502) of purifying, and a step (506) of providing. In the step (318, 336, 504) of discharging, the semiconductor material (100) is electrostatically discharged. In the step (306, 322, 328, 332, 334, 502) of purifying, particles (310) are removed from the semiconductor material (100). In the step (340, 344, 346, 350, 506) of providing, the semiconductor material (100) is made available for further use. |
