MULTI MATERIALS AND SELECTIVE REMOVAL ENABLED RESERVE TONE PROCESS

摘要

Embodiments described herein generally relate to methods for device patterning. In various embodiments, a plurality of protrusions and gaps are formed on a substrate, and each gap is formed between adjacent protrusions. Each protrusion includes a first line, a second line and a third line. The first and third lines include a first material, and the second lines include a second material that is different from the first material. A fourth line is deposited in each gap and the fourth line includes a third material that is different than the first and second materials. Because the first, second and third materials are different, one or more lines can be removed by selective etching while adjacent lines that are made of a different material may not be covered by a mask. The critical dimensions (CD) and the edge displacement errors (EPE) of the mask are increased.

主权项

1. A method for patterning, comprising:
placing a substrate into a processing chamber; and depositing a first line on the substrate in each of a plurality of gaps, wherein each gap is between adjacent protrusions formed on the substrate, wherein each protrusion includes a second line, a third line, and a fourth line, wherein the third line is sandwiched between the second and fourth lines, wherein the first line comprises a first material, the second and fourth lines each comprises a second material, and the third line comprises a third material, and wherein the first line is between the fourth line of one protrusion and the second line of an adjacent protrusion.