发明名称 |
DEVICE AND METHOD FOR MANUFACTURING A DEVICE |
摘要 |
In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex. |
申请公布号 |
US2016043034(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201414453629 |
申请日期 |
2014.08.07 |
申请人 |
Infineon Technologies AG |
发明人 |
Joshi Ravi |
分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of forming a device, the method comprising:
forming a metal layer over a substrate; and forming at least one barrier layer, the forming comprising:
depositing a solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate; andat least partially decomposing the at least one organic ligand of the metal complex. |
地址 |
Neubiberg DE |