发明名称 DEVICE AND METHOD FOR MANUFACTURING A DEVICE
摘要 In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex.
申请公布号 US2016043034(A1) 申请公布日期 2016.02.11
申请号 US201414453629 申请日期 2014.08.07
申请人 Infineon Technologies AG 发明人 Joshi Ravi
分类号 H01L23/532;H01L21/768 主分类号 H01L23/532
代理机构 代理人
主权项 1. A method of forming a device, the method comprising: forming a metal layer over a substrate; and forming at least one barrier layer, the forming comprising: depositing a solution comprising a metal complex comprising a central metal atom or ion and at least one organic ligand over the substrate; andat least partially decomposing the at least one organic ligand of the metal complex.
地址 Neubiberg DE