发明名称 Substrate Heating Device, Substrate Heating Method and Computer-Readable Storage Medium
摘要 A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.
申请公布号 US2016042984(A1) 申请公布日期 2016.02.11
申请号 US201514816550 申请日期 2015.08.03
申请人 TOKYO ELECTRON LIMITED 发明人 MIZUTA Masato;TAKAYANAGI Koji
分类号 H01L21/67;F27D7/06;F27D19/00;F27B17/02 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate heating device, comprising: a plurality of heating modules, each of which includes a processing vessel within which a heating plate for mounting and heating a substrate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere existing within the processing vessel, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths, each of which is connected to the exhaust port of each of the plurality of heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the plurality of heating modules; a branch path branched from each of the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting part configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.
地址 Tokyo JP