发明名称 |
Substrate Heating Device, Substrate Heating Method and Computer-Readable Storage Medium |
摘要 |
A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path. |
申请公布号 |
US2016042984(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201514816550 |
申请日期 |
2015.08.03 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MIZUTA Masato;TAKAYANAGI Koji |
分类号 |
H01L21/67;F27D7/06;F27D19/00;F27B17/02 |
主分类号 |
H01L21/67 |
代理机构 |
|
代理人 |
|
主权项 |
1. A substrate heating device, comprising:
a plurality of heating modules, each of which includes a processing vessel within which a heating plate for mounting and heating a substrate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere existing within the processing vessel, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths, each of which is connected to the exhaust port of each of the plurality of heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the plurality of heating modules; a branch path branched from each of the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting part configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path. |
地址 |
Tokyo JP |