METHOD OF REMOVING OXIDE ON SEMICONDUCTOR SURFACE BY LAYER OF SULFUR

摘要

Embodiments of the present disclosure relate generally to a method of passivating and/or removing oxides on a semiconductor surface by using ammonium sulfide, the ammonium sulfide is formed by reacting ammonia and hydrogen sulfide in a semiconductor processing chamber, therefore the ammonium sulfide can be used to clean and remove oxides on a semiconductor surface without the concern of ESH and storage, the ammonium sulfide can also be used to passivate a semiconductor surface by forming a layer of sulfur, and thus preventing the reformation of native oxides, the layer of sulfur can be optionally removed to reduce the thickness of the semiconductor material.

主权项

1. A method for removing an oxide on a semiconductor material comprising:
providing ammonia and hydrogen sulfide on a semiconductor surface overlaid with an oxide; reacting the ammonia with the hydrogen sulfide to form an ammonium sulfide; and removing the oxide on the semiconductor surface by the ammonium sulfide.