发明名称 SELF-ASSEMBLED NANOSTRUCTURES INCLUDING METAL OXIDES, SEMICONDUCTOR STRUCTURES COMPRISING THEREOF, AND METHODS OF FORMING SAME
摘要 A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.
申请公布号 US2016042941(A1) 申请公布日期 2016.02.11
申请号 US201514920018 申请日期 2015.10.22
申请人 Micron Technology, Inc. 发明人 Hendricks Nicholas;Olson Adam L.;Brown William R.;Eom Ho Seop;Chen Xue;Jain Kaveri;Schuldenfrei Scott
分类号 H01L21/027;C08L53/00;H01L21/033;H01L21/3105;H01L21/02 主分类号 H01L21/027
代理机构 代理人
主权项 1. A semiconductor structure comprising a self-assembled nanostructure on a substrate, the self-assembled nanostructure comprising self-assembled domains in a matrix, the self-assembled domains comprising at least a first portion and a second portion, the first portion comprising a first block of a block copolymer material and a first metal oxide, the second portion comprising the first block of the block copolymer material and a second metal oxide, the matrix comprising a second block of the block copolymer material and substantially without any metal oxide.
地址 Boise ID US