发明名称 |
SELF-ASSEMBLED NANOSTRUCTURES INCLUDING METAL OXIDES, SEMICONDUCTOR STRUCTURES COMPRISING THEREOF, AND METHODS OF FORMING SAME |
摘要 |
A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate. |
申请公布号 |
US2016042941(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
US201514920018 |
申请日期 |
2015.10.22 |
申请人 |
Micron Technology, Inc. |
发明人 |
Hendricks Nicholas;Olson Adam L.;Brown William R.;Eom Ho Seop;Chen Xue;Jain Kaveri;Schuldenfrei Scott |
分类号 |
H01L21/027;C08L53/00;H01L21/033;H01L21/3105;H01L21/02 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure comprising a self-assembled nanostructure on a substrate, the self-assembled nanostructure comprising self-assembled domains in a matrix, the self-assembled domains comprising at least a first portion and a second portion, the first portion comprising a first block of a block copolymer material and a first metal oxide, the second portion comprising the first block of the block copolymer material and a second metal oxide, the matrix comprising a second block of the block copolymer material and substantially without any metal oxide. |
地址 |
Boise ID US |