发明名称 |
A METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF TRANSISTOR |
摘要 |
Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film. |
申请公布号 |
WO2016022260(A1) |
申请公布日期 |
2016.02.11 |
申请号 |
WO2015US40425 |
申请日期 |
2015.07.14 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KIM, YIHWAN;LI, XUEBIN;DUBE, ABHISHEK |
分类号 |
H01L21/336;H01L21/20;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|