| 摘要 |
This semiconductor optical element is provided with: a silicon substrate formed of single-crystal silicon; a first-conductivity-type buffer layer, which is provided on the silicon substrate, and which is configured from a single-crystal material containing a group IV element; a second-conductivity-type well layer, which is provided on the buffer layer, and which is configured from a first group IV single-crystal material; a light emitting layer, which is provided on the well layer, and which is configured from a second group IV single crystal material; a third-conductivity-type first diffusion layer provided on the well layer; a fourth-conductivity-type second diffusion layer provided on the well layer; and a stressor that applies stress to the light emitting layer. The lattice spacing of the second group IV single-crystal material constituting the light emitting layer, said lattice spacing being in the predetermined direction, is larger than the lattice spacing of the first group IV single-crystal material constituting the well layer. |
